Moses Gu, Hwangbo Yuhwan, Seonwoo Kim*, Yubin Kim*, Se-Hoon Park*, Sung-Hoon Choa† , and Hyun Jin Nam*,†
Department of Semiconductor Engineering, Seoul National University of Science and Technology, Gongneung-ro 232, Nowon-gu, Seoul 01811, Korea
*ICT device Packaging Research Center, Korea Electronics Technology Institute (KETI), 25, Saenari-ro, Bundang-gu, Seongnam-si, Gyeonggi-do 13509, Korea
서울과학기술대학교 일반대학원 지능형반도체공학과
*한국전자기술연구원 ICT디바이스패키징연구센터
Reproduction, stored in a retrieval system, or transmitted in any form of any part of this publication is permitted only by written permission from the Polymer Society of Korea.
A stretchable low-dielectric film was developed using hydrophobic polydimethylsiloxane (PDMS) with porous silica and surfactant. The surface property changes due to the presence or absence of the surfactant were confirmed through contact angle hysteresis and 3D microscopy. The dielectric properties were observed according to the content of porous silica, and the film with a 25% content ratio showed the lowest dielectric constant. Compared to pure PDMS film, the dielectric constant decreased from 2.75 to 2.53, approximately an 8% reduction, and the dielectric loss decreased from 0.045 to 0.025, approximately a 44% reduction. With the improvement in dielectric properties, the S-parameter characteristics showed that the S11 value improved from -13.7 dB to -22.06 dB, approximately a 61% improvement, and the S21 value improved from -3.89 dB to -2.69 dB, approximately a 31% improvement. The stretchability of PDMS with excellent dielectric properties was up to 80%, and the tensile strain rate of the low-dielectric PDMS fabricated as a transmission line was up to 60%. In the repeated tensile test to verify durability, resistance measurement was possible even after 130 repetitions at a tensile strain rate of 15%.
소수성이 강한 polydimethylsiloxane(PDMS) 필름을 다공성 실리카와 계면활성제를 활용하여 신축 가능한 저유전 필름 개발을 진행하였다. 계면활성제의 유무에 따른 표면 특성 변화를 접촉각 히스테리시스와 3D 현미경을 통해 확인하였다. 그리고 다공성 실리카 함량에 따른 유전 특성 변화를 관찰하였고, 그 결과 25% 함량비를 나타낸 필름이 가장 낮은 유전율 값을 보였다. 순수 PDMS 필름 대비 유전율은 2.75에서 2.53으로 약 8% 감소하였고, 유전손실은 0.045에서 0.025로 약 44% 감소시켰다. 유전 특성이 개선됨으로써 S-parameter 특성은 S11 값은 -13.7 dB에서 -22.06 dB로 약61%개선되었고, S21은 -3.89 dB에서 -2.69 dB로 약 31% 정도 개선된 결과 값을 얻었다. 우수한 유전 특성을 보유한 PDMS의 신축성은 최대 80%까지 인장이 가능하였으며, 전송선로로 제작된 저유전 PDMS의 인장변형율은 최대 60%까지 인장이 가능하였다. 내구성을 검증하기 위한 반복 인장 시험에서는 인장변형율 15%에서 130회 반복 시험 이후에도 저항 측정이 가능하였다.
Keywords: low-k material, polydimethylsiloxane, S-parameter, high frequency.
2024; 48(6): 630-638
Published online Nov 25, 2024
Department of Semiconductor Engineering, Seoul National University of Science and Technology, Gongneung-ro 232, Nowon-gu, Seoul 01811, Korea
*ICT device Packaging Research Center, Korea Electronics Technology Institute (KETI), 25, Saenari-ro, Bundang-gu, Seongnam-si, Gyeonggi-do 13509, Korea