To improve the volume and surface conductivity of the nylon 6 films, porous nylon 6 film was prepared and then treated with copper sulfide. which is known as the p-type semiconductor. Optimum conditions for the treating of Cu_XS were studied. As a result, the amount of the copper compound, the reducing agent and the sulfur containing compound should influence on the amount of absorbed copper sulfide. The surface and volume conductivity of the Cu_XS-treated porous nylon 6 film were found to be higher by order of 10¹⁰ and 10⁸, respectively than those of the original nylon 6 film. The morphology of surface and fracture of the Cu_XS-treated porous nylon 6 films was investigated with scanning electron microscope(SEM). Temperature dependence of conductivity of the Cu_XS-treated porous nylon 6 film was investigated. The I-V(Current-Voltage) characteristics and time dependence of samples were observed. Electrical conduction mechanism of Cu_XS-treated porous nylon 6 films was not dependent on matrix polymer but dependent on the Cu_XS crystal and the conduction is mainly electronic.

나일론 6필름의 부피 및 표면 전도도를 향상시키기 위하여 다공질 나일론 6필름을 제조하여 P형 반도체로 알려진 Cu_XS로 처리하였다. Cu_XS로 처리한 다공질 나일론 6필름의 표면 및 부피 전도도는 각각 10¹⁰과 10⁸정도 증가함을 알 수 있었다. 또한 Cu_XS로 처리한 다공질 나일론 6필름의 전도도의 온도의존성, I-V 특성 및 시간의존성을 조사한 결과 전도 기구는 모상인 나일론 6에는 의존하지 않고 Cu_XS 결정에 의존하며 전도는 주로 전자전도임을 확인하였다.

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